? 2011 ixys all rights reserved 1 - 5 20110118a ixda 20n120as ixys reserves the right to change limits, test conditions and dimensions. i c25 = 38 a v ces = 1200 v v ce(sat) typ = 2.4 v high voltage igbt short circuit soa capability square rbsoa features ? npt igbt - low saturation voltage - positive temperature coeffcient for easy paralleling ? to-263 package - smd assembly - industry standard outline applications ? drives ? power supplies - switched mode power supplies - uninterruptible power supplies igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 i c90 t c = 25c t c = 90c 38 25 a a i cm v cek v ge = 15 v; r g = 82 w ; t vj = 125c rbsoa, clamped inductive load; l = 100 h 35 v ces a t sc (scsoa) v ce = v ces ; v ge = 15 v; r g = 82 w ; t vj = 125c non-repetitive 10 s p tot t c = 25c 200 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v ce(sat) i c = 20 a; v ge = 15 v; t vj = 25c t vj = 125c 2.4 2.6 3.0 v v v ge(th) i c = 0.6 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c t vj = 125c 0.8 0.8 ma ma i ges v ce = 0 v ; v ge = 20 v 200 na t d(on) t r t d(off) t f e on e off inductive load; t vj = 125c v ce = 600 v; i c = 20 a v ge = 15 v; r g = 82 w 100 75 500 70 3.1 2.4 ns ns ns ns mj mj c ies q gon v ce = 25 v; v ge = 0 v; f = 1 mhz v ce = 600 v; v ge = 15 v; i c = 18 a 1000 70 pf nc r thjc 0.63 k/w tab 3 h 1 tab
? 2011 ixys all rights reserved 2 - 5 20110118a ixda 20n120as ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings t vj t stg -55...+150 -55...+125 c c symbol conditions characteristic values min. typ. max. weight 2 g c2 a a1 c l e w 2x e l1 d 3 2 1 3x b2 e1 3x b h d1 supplier option l2 4 m i n m ax m i n m ax a 4.06 4.83 0.160 0.190 a 1 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c 2 1.14 1.40 0.045 0.029 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 e 9.65 10.41 0.380 0.410 e 1 6.22 8.20 0.245 0.323 e h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 l2 1.02 1.52 0.040 0.060 w t y p. 0.02 0.040 t y p. 0.0008 0.0016 a ll d i m en si on s c onfo r m w i th and/o r a r e w i th i n j e d ec s tanda r d. di m . m illi m e t er i n c h es 2,54 bs c t y p. 0.10 t y p. 0.004 0,100 bs c
? 2011 ixys all rights reserved 3 - 5 20110118a ixda 20n120as ixys reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 13v 11v 15v 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 13v 11v 15v 9v 9v v ce [v] i c [a] q g [nc] t j = 25c i c [a] v ce [v] t j = 125c v ge =17v i c [a] v ge [v] v ce = 20 v t j = 25c v ge [v] v ce = 600 v i c = 25 a v ge = 17v fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. turn on gate charge
? 2011 ixys all rights reserved 4 - 5 20110118a ixda 20n120as ixys reserves the right to change limits, test conditions and dimensions. 0 10 20 30 40 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 0 10 20 30 40 0 1 2 3 4 5 0 100 200 300 400 500 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0 50 100 150 200 250 300 350 0 1 2 3 4 0 400 800 1200 1600 0 50 100 150 200 250 300 350 0 4 8 12 0 80 160 240 single pulse v ce = 600v v ge = 15v r g = 82 t j = 125c 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 40 e on t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c [a] i c [a] e on [mj] t [ns] t [ns] r g [ ] v ce [v] t [s] i cm [a] z thjc [k/w] e off [mj] v ce = 600v v ge = 15v r g = 82 t j = 125c e off [mj] t [ns] t [ns] v ce = 600v v ge = 15v i c = 20a t j = 125c e on [mj] r g [ ] v ce = 600v v ge = 15v i c = 20a t j = 125c r g = 82 t j = 125c v cek < v ces fig. 5 typ. turn on energy and switching times versus collector current fig. 7 typ. turn on energy and switching times versus gate resistor fig.8 typ. turn off energy and switching times versus gate resistor fig. 9 reverse biased safe operating area rbsoa fig. 10 typ. transient thermal impedance fig. 6 typ. turn off energy and switching times versus collector current t vj = 125c v r = 600 v t vj = 125c i f = 30 a v r = 600 v
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